eGaN

GaN devices are heteroepitaxial. Thin GaN layers grown on foreign substrates (silicon, silicon carbide, or sapphire) at temperatures above 1000°C, with significant lattice and thermal expansion mismatch. The result is severe wafer bow after cooldown. GaN-on-Si shows up to 17% lattice mismatch, producing bow that can reach −200µm on 150mm and worsens by 125 to 300% at 200mm. The epitaxial stack itself adds 4 to 5µm of buffer plus channel and barrier, increasing wafer mass.

Standard silicon carriers either deflect under that load or cannot accommodate the bowed geometry. The eGaN line uses 20mm slot pitch, extended side supports, and cushioned contact points engineered for these substrate-specific bow profiles.

GaN HEMTs operate with a thin 2DEG (two-dimensional electron gas) channel that is vulnerable to electrostatic discharge. Gate oxide integrity and AlGaN barrier properties degrade rapidly from ESD events, often invisibly until device test reveals reduced yield or shifted parameters.

The eGaN line uses static dissipative materials throughout: carbon-fiber polycarbonate shells for shipping containers, conductive polypropylene for in-fab process boats and canisters, and controlled surface resistivity on wafer-contact surfaces. The protection runs across the full chain, from substrate intake to finished-device shipping.

Yes. The eFOUP-C Modular System uses a single 300mm FOUP shell with application-specific inserts. The shell is the same across configurations. The insert is selected for the substrate and diameter you process, and is permanently installed at order time. The same platform covers 100 to 150mm GaN-on-SiC and 150 to 200mm GaN-on-Si.

Construction is carbon-fiber polycarbonate shell with PEEK contact surfaces, with 2-port or 4-port N₂ purge options. Slot pitch is 20mm to support thin or bowed wafers. For fabs running multiple substrate formats in parallel, this avoids maintaining separate FOUP families per substrate.

Yes. Custom configurations are part of the standard offering and cover material selection, slot spacing, cushion profiles, purge systems, and automation interfaces. They are specified to the substrate type, process flow, and equipment in use.

Both standard catalog products and custom configurations are manufactured under ISO 9001 and IATF 16949 quality systems.

Yes. The eGaN line covers all three GaN substrate variants: bulk GaN, GaN-on-Si, and GaN-on-SiC.

Each variant has distinct handling requirements. Bulk GaN is brittle and ships in small diameters. GaN-on-Si scales to 300mm and emphasizes bow tolerance and mass-rated supports for power-device flows. GaN-on-SiC sits in between on diameter but demands aggressive contamination control for RF device fabrication. Carriers are specified per variant, with material set, contact geometry, and slot pitch tuned to the substrate type and diameter.

Particles as small as 0.2µm affect GaN device yield, below the threshold conventional silicon-fab carriers were designed for. Moisture absorption on AlGaN surfaces also matters: it degrades 2DEG density and increases dynamic on-resistance.

The eGaN line uses sealed, purgeable environments (N₂ purge-capable FOUPs and pods), low-outgassing polymers in contact surfaces, and hermetic sealing during transport and storage.

Yes. Sample units of standard products are available for qualification testing in your process flow. For custom configurations, the engineering process includes prototype validation under your handling conditions before the first production run. Contact application engineering with substrate type, diameter, mass, bow profile, and automation interface to request a sample pack.

The eGaN line is manufactured to ISO 9001 (general quality management) and IATF 16949 (automotive-grade) standards. Both certifications apply to standard catalog products and to custom configurations. IATF 16949 is the relevant standard for customers shipping GaN power devices into automotive applications such as EV traction inverters or on-board chargers.